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BUK7610-55AL
N-channel TrenchMOS standard level FET
Rev. 02 -- 9 January 2008 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features
175 C rated Stable operation in linear mode Q101 compliant TrenchMOS technology
1.3 Applications
12 V and 24 V loads DC linear motor control Automotive systems Repetitive clamped inductive switching
1.4 Quick reference data
Table 1. Symbol ID Ptot EDS(AL)S Quick reference Parameter drain current total power dissipation non-repetitive drain-source avalanche energy Conditions VGS = 10 V; Tmb = 25 C; see Figure 4 and 1 Tmb = 25 C; see Figure 2 ID = 75 A; Vsup 55 V; RGS = 50 ; VGS = 10 V; Tj(init) = 25 C; unclamped inductive load VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 12 and 13
[1]
Min -
Typ -
Max 75 300 1.1
Unit A W J
Avalanche ruggedness
Static characteristics RDSon drain-source on-state resistance 8.5 10 m
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain
1
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
2 3
SOT404 (D2PAK)
3. Ordering information
Table 3. Ordering information Package Name BUK7610-55AL D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead SOT404 cropped) Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 C; VGS = 10 V; see Figure 4 and 1 Tmb = 25 C; VGS = 10 V; see Figure 4 and 1 Tmb = 100 C; VGS = 10 V; see Figure 4 IDM Ptot Tstg Tj peak drain current total power dissipation storage temperature junction temperature ID = 75 A; Vsup 55 V; RGS = 50 ; VGS = 10 V; Tj(init) = 25 C; unclamped inductive load see Figure 3
[4][5] [6] [1][2] [3] [3]
Conditions Tj 25 C; Tj 175 C RGS = 20 k
Min -20 -55 -55 -
Max 55 55 20 122 75 75 490 300 175 175 1.1
Unit V V V A A A A W C C J
Tmb = 25 C; tp 10 s; pulsed Tmb = 25 C; see Figure 2
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy Source-drain diode IS ISM
BUK7610-55AL_2
-
-
J
source current peak source current
Tmb = 25 C Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C
Rev. 02 -- 9 January 2008
[1][2] [3]
-
122 75 490
A A A
2 of 13
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
[1] [2] [3] [4] [5] [6]
Current is limited by power dissipation chip rating. Refer to document 9397 750 12572 for further information. Continuous current is limited by package. Single shot avalanche rating limited by maximum junction temperature of 175 C. Repetitive avalanche rating limited by average junction temperature of 170 C. Refer to application note AN10273 for further information.
150 ID (A) 100
(1)
003aaa726
120 Pder (%) 80
03aa16
50
40
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
VGS
10 V
P der =
P tot P tot (25C )
x 100 %
(1) Capped at 75 A due to package.
Fig 1. Continuous drain current as a function of mounting base temperature
102 IAV (A)
(1)
Fig 2. Normalized total power dissipation as a function of mounting base temperature
003aaa739
Tj = 25 C
(2)
10
(3)
150 C
1
10-1 10-2
10-1
1
tAV (ms)
10
(1) Single shot. (2) Single shot. (3) Repetitive.
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
BUK7610-55AL_2 (c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 January 2008
3 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
103 ID (A) 102
(1)
003aaa737
Limit RDSon = VDS / ID
tp = 10 s
100 s
1 ms DC 10 10 ms 100 ms
1 1 10 VDS (V)
102
Tmb = 25 C; IDM is single pulse (1) Capped at 75 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base Conditions mounted on a printed-circuit board; minimum footprint; vertical in still air see Figure 5 Min Typ 50 Max Unit K/W
Rth(j-mb)
-
0.25
0.5
K/W
BUK7610-55AL_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 January 2008
4 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
1 Zth(j-mb) (K/W) = 0.5
003aaa734
10-1
0.2
0.1 0.05 0.02
tp T
10-2
P
=
single shot 10-3 10-6 10-5 10-4 10-3 10-2 10-1
tp T
t
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Symbol V(BR)DSS Characteristics Parameter drain-source breakdown voltage Conditions ID = 250 A; VGS = 0 V; Tj = -55 C ID = 250 A; VGS = 0 V; Tj = 25 C VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 C; voltage see Figure 10 and 11 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 10 and 11 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 10 and 11 IDSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 175 C VDS = 55 V; VGS = 0 V; Tj = 25 C IGSS gate leakage current VDS = 0 V; VGS = +20 V; Tj = 25 C VDS = 0 V; VGS = -20 V; Tj = 25 C RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 C; see Figure 12 and 13 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 12 and 13 Min 50 55 2 1 Typ 3 Max 4 Unit V V V V
Static characteristics
-
0.05 2 2 -
4.4 500 10 100 100 20
V A A nA nA m
-
8.5
10
m
BUK7610-55AL_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 January 2008
5 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
Table 6. Symbol VSD trr Qr
Characteristics ...continued Parameter source-drain voltage Conditions IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 16 Min Typ 0.85 73 430 Max 1.2 Unit V ns nC
Source-drain diode
reverse recovery time IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 30 V; Tj = 25 C recovered charge IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 30 V; Tj = 25 C ID = 25 A; VDS = 44 V; VGS = 10 V; Tj = 25 C; see Figure 14 ID = 25 A; VDS = 44 V; VGS = 10 V; Tj = 25 C; see Figure 14 ID = 25 A; VDS = 44 V; VGS = 10 V; Tj = 25 C; see Figure 14 ID = 25 A; VDS = 44 V; Tj = 25 C; see Figure 14 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 15 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 15 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 15 VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 ; Tj = 25 C VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 ; Tj = 25 C VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 ; Tj = 25 C VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 ; Tj = 25 C from upper edge of drain mounting base to center of die; Tj = 25 C from source lead to source bond pad; Tj = 25 C
Dynamic characteristics QG(tot) total gate charge 124 nC
QGS
gate-source charge
-
22
-
nC
QGD
gate-drain charge
-
50
-
nC
VGS(pl) Ciss
gate-source plateau voltage input capacitance
-
5 4710
6280
V pF
Coss
output capacitance
-
980
1180
pF
Crss
reverse transfer capacitance turn-on delay time
-
560
770
pF
td(on)
-
33
-
ns
tr
rise time
-
117
-
ns
td(off)
turn-off delay time
-
132
-
ns
tf
fall time
-
95
-
ns
LD
internal drain inductance internal source inductance
-
2.5
-
nH
LS
-
7.5
-
nH
BUK7610-55AL_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 January 2008
6 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
400 ID (A) 300
003aaa729
20 RDSon (m) 15 7 8 9 10
003aaa731
20 18 16 14 12
200
100
0 0 2 4
VGS (V) = 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 6 8 VDS (V) 10
10 VGS (V) = 20
5
0 0 100 200 300 ID (A) 400
T j = 25 C
T j = 25 C
Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values
40 gfs (S) 35
003aaa732
Fig 7. Drain-source on-state resistance as a function of drain current; typical values
150 ID (A) 100
003aaa733
30
50 25 Tj = 175 C 20 0 20 40 60 ID (A) 80 0 0 2 4 6 8 10 VGS (V) Tj = 25 C
T j = 25 C; VDS = 25 V
VDS = 25 V
Fig 8. Forward transconductance as a function of drain current; typical values
Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values
BUK7610-55AL_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 January 2008
7 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2 min typ max
03aa35
3
typ
10-3
2
min
10-4
1
10-5
0 -60
0
60
120 Tj (C)
180
10-6 0 2 4 VGS (V) 6
ID = 1 m A; VDS = VGS
T j = 25 C; VDS = VGS
Fig 10. Gate-source threshold voltage as a function of junction temperature
18 RDSon (m) 14
003aaa730
Fig 11. Sub-threshold drain current as a function of gate-source voltage
2 a 1.5
03ne89
1
10 0.5
6 5 10 15 VGS (V) 20
0 -60
0
60
120
Tj (C)
180
T j = 25 C; ID = 25 A
a=
R DSon R DSon (25C )
Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values
Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature
BUK7610-55AL_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 January 2008
8 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
10 VGS (V) 8 VDS = 14 V 6
003aaa735
8000 C (pF) 6000
003aaa738
Ciss
VDS = 44 V 4000 Coss
4 C 2000 2
rss
0 0 50 100 QG (nC) 150
0 10-1
1
10
VDS (V)
102
T j = 25 C; ID = 25 A
VGS = 0 V ; f = 1 M H z
Fig 14. Gate-source voltage as a function of gate charge; typical values
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
003aaa736
150 IS (A) 100
Tj = 25 C 50 Tj = 175 C
0 0.0
0.3
0.6
0.9
VSD (V)
1.2
VGS = 0 V
Fig 16. Source current as a function of source-drain voltage; typical values
BUK7610-55AL_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 January 2008
9 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A E A1 mounting base
D1
D
HD
2
Lp
1
3
b c Q
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT404
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 05-02-11 06-03-16
Fig 17. Package outline SOT404 (D2PAK)
BUK7610-55AL_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 January 2008
10 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history Release date 20080109 Data sheet status Product data sheet Change notice Supersedes BUK75_7610_55AL_1 Document ID BUK7610-55AL_2 Modifications:
* * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Typical thermal resistance (j-mb) figure added in Table 5. Product data sheet -
BUK75_7610_55AL_1
20041022
BUK7610-55AL_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 January 2008
11 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
10. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BUK7610-55AL_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 January 2008
12 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 January 2008 Document identifier: BUK7610-55AL_2

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